| 摘要 |
PURPOSE:To prevent a short circuit between electrodes and a defect in insulation by a method wherein, when a first gate insulating film is etched to form an identical pattern by making use of a first gate electrode as a mask, a whole field region is covered with a mask layer in order to eliminate occurrence of an excavated part under an edge part of the first gate electrode in the field region. CONSTITUTION:A field region and an active region are formed on a semiconductor substrate 11 by selective formation of a field insulating film 12; after that, a first gate insulating film 13 and a first gate-electrode formation material layer are formed on the whole surface. Then, the first gate electrode formation material layer is patterned; a first gate electrode 14 is formed; after that, the whole field region is covered with a mask layer 15. Then, the first gate insulating film 13 only in the active region is etched to form a pattern identical to the first gate electrode 14 by making use of the mask layer 15 and the first gate electrode 14 as masks. After that, the mask layer 15 is removed; after that, a second gate insulating film 16 is formed on the whole surface; a second gate electrode 17 is formed on it. |
