| 摘要 |
PURPOSE:To obtain a sufficiently low source resistance even if nonalloy is used irrespective of the intermediary of an AlGaAs layer by forming a cap layer made of a one conductivity type GaAs layer and one conductivity type InGaAs layer on a carrier supply layer, a source electrode and a drain electrode on the cap layer and a gate electrode on the carrier supply layer. CONSTITUTION:A cap layer CT made of a one conductivity type GaAs layer, such as an N-type GaAs layer 14 and a one conductivity type InGaAs layer, such as an N<+> type In0.5Ga0.5As layer 16 is formed on a carrier supply layer, such as an N-type Al0.2Ga0.8As electron supply layer 13. A source electrode 17 and a drain electrode 18 are formed on the layer CT, and a gate electrode 19 is provided on the carrier supply layer. Thus, even if a layer which becomes a barrier regarding conductivity exists between a channel and a surface, a semiconductor device having electrodes ohmically in contact with nonalloy including sufficiently low source resistance in high speed operation can be obtained. |
