| 摘要 |
PURPOSE:To improve the heat resisting property of a resist during the development processing of the resist by incorporating silicic acid or a quarternary ammonium salt of alkyl silicate in an aqueous solution of org. quarternary ammonium hydroxide as a main component. CONSTITUTION:The developer for the positive type photoresist is prepared by incorporating the silicic acid or the quarternary ammonium salt of alkyl silicate in the aqueous solution of the org. quarternary ammonium hydroxide as the main component of said aqueous solution. The silicate or the quarternary ammonium salt contd. in said aqueous solution is preferably contnd. in a range of 1-30,000ppm, expressed in terms of silicon atom. Thus, the heat resisting property of the resist can be improved in the development processing of the resist. And, in case of aluminum substrate being used for a substrate, the etching rate of said substrate plate can be reduced. |
