| 摘要 |
<p>PURPOSE: To cut a wafer into many individual diodes by separating them with clean fructure by etching grooves by forming the grooves in chambers between mirror surfaces by wet chemical etching or dry etching after masking is added to semiconductor sections to be protected. CONSTITUTION: The mirror surfaces 2 of laser diodes 6 are formed in prescribed structures by performing groove etching using a mask on the surface of a wafer 1 having a thickness D. The grooves (or chambers between mirror surfaces) 3 formed by dry etching have widths of (d) and depths of (h). After the mirror structure 2 is formed on the surface of the semiconductor substrate 1 by etching, semiconductor sections to be protected are coated with a mask of a photoresist, etc. Then grooves (parting grooves) 4 having depths of (t) are formed from the bottoms of the chambers 3 between the diodes 6 by wet etching or dry etching. When the thickness D of the wafer 1 is twice as thick as the widths (d) of the chambers 3, the grooves 4 become separating and cutting grooves. In addition, a 3:1:1 etchant having a composition of 3H2 SO4 :1H2 O2 :H2 O can be used for wet chemical etching.</p> |
