发明名称 SENSE AMPLIFIER OPERATION CONTROL CIRCUIT
摘要 PURPOSE: A sense amplifier operation control circuit is provided, which reduces current consumption in case of a high power supply voltage(Vdd), and improves an operation characteristics of a sense amplifier in case of a low power supply voltage(Vdd), by controlling a pull-up bias voltage and a pull-down bias voltage of the sense amplifier according to a potential level of the power supply voltage. CONSTITUTION: A memory cell part(10) comprises a number of memory cells, and a bit node sense amplifier part(30) senses and amplifies data of the memory cell part during a read operation or data inputted during a write operation and then outputs them to the memory cell part. A voltage detection part(40) outputs a signal(Pwr_dt) detecting an amplitude of a power supply voltage(VDD). A selection driver part(200) generates pull-up control signals(SP1B,SP2B) controlling a time to supply an external voltage(Ex_VDD) and an internal voltage(VDC) to a pull-up bias voltage(A) of the sense amplifier part respectively by an output signal of the voltage detection part, and controls a time to supply a ground voltage(Vss) to a pull-down bias voltage(B) of the sense amplifier part by the output signal of the voltage detection part.
申请公布号 KR20020039462(A) 申请公布日期 2002.05.27
申请号 KR20000069288 申请日期 2000.11.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SEON MIN;LEE, YONG HWAN
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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