发明名称 |
PLASMA PROCESSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processor capable of maintaining a stable plasma discharge. SOLUTION: The plasma processor for plasma-processing a substrate 7 housed in a process chamber 8 of a vacuum chamber 1 comprises an insulator 10 of a specified width on the top face of a lower electrode 5 insulatively mounted in a base 2 of the chamber 1 forming a gap 9 with the chamber 1 along an entrance of the gap 9. This increases the impedance of the insulator mounting part to suppress the plasma discharge in the gap 9, and stabilize the plasma discharge in the chamber 8 in a plasma process with the plasma discharge generated in the process chamber 8. |
申请公布号 |
JP2002158215(A) |
申请公布日期 |
2002.05.31 |
申请号 |
JP20000355414 |
申请日期 |
2000.11.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
FURUKAWA RYOTA;IWAI TETSUHIRO;NAGATOME RYUJI |
分类号 |
H05H1/46;C23F4/00;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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