| 摘要 |
PURPOSE:To enable use of SnO2 to be realized and facilitate texturing which is efficient for increasing light path length within a semiconductor layer to be easily achieved by using a support consisting of a metal foil or a metal thin plate on a macromolecular film substrate and by forming a transparent electrode layer on a metal support. CONSTITUTION:A transparent electrode film consisting of a Sb2O3-SnO2 film is formed by a strip of aluminum foil as the first support. Then, a polyimide precursor solution is applied to the side surface of this transparent electrode layer by the casting method, the side of polyimide film substrate corresponding to it is overlapped, and heat and pressure are applied under the following conditions by a heating press for laminating it. Then, etching is performed and a transparent electrode layer of a specified pattern is exposed. Furthermore, a specified transparent electrode pattern layer is formed on a single surface and a transparent polyimide film substrate with the second support (stainless steel plate) is formed on the other surface. A photoelectric semiconductor layer consisting of a p-type-i-type-n-type amorphous silicon thin film is formed on a transparent polyimide film substrate through a transparent electrode pattern layer. A flexible photoelectric conversion element consisting of a substrate, a transparent electrode layer, a semiconductor layer, a rear face electrode layer, and an electrical insulation layer is peeled off the second supporting plate. |
