| 摘要 |
<p>PURPOSE:To obtain an SiC film whose optical bandgap is large and whose conductivity is high by specifying the hydrogen dilution ratio and the carbon mixing ratio to be within a certain range, and generating a plasma at high-frequency power density of a certain value when forming the siC film by means of high-frequency glow discharge method. CONSTITUTION:When forming an SiC film using a high-frequency glow discharge method, the carbon mixing ratio k (k=[C]/{[S]+ [C]}), which is a ratio between a partial pressure [S] of a material gas containing silicon in the material gas and a partial pressure [C] of a material gas containing carbon, is specified to 0.2 or below, while the hydrogen dilution ratio gamma(gamma=[H]/{[S]+[C]}, where [H], or a partial pressure of the hydrogen gab, is 40 or over, the temperature of the substrate being maintained above 150 deg.C, generating a plasma with a high-frequency power density between 80mW/cm<2> and 300mW/cm<2>, a silicon carbide film being stacked on the substrate. The SiC film thus obtained has an optical bandgap of 1.8 eV or more and a dark conductivity of 10<-6>Scm<-1> or more, and its peak of Raman scattering light at around 530cm<-1> where the existence of a silicon crystal phase is indicated.</p> |
