| 摘要 |
PURPOSE:To reduce or eliminate heat shrinkage and to prevent generation of curl of a flexible photoelectric conversion element when temperature is cooled down to a room temperature by allowing an electrical insulation layer with nearly the same thermal coefficient of expansion as a transparent plastic substrate to join a semiconductor layer at high temperature through a rear surface electrode layer. CONSTITUTION:A film is continuously formed by casting a solution of polyimide precursor to a support consisting of a roll-like copper box. A semiconductor layer with photoconductivity consisting of p-type-i-type-n-type amorphous silicon thin film is formed on an colorless and transparent polyimide film substrate through a conductive thin film of ITO. Then, it is retained within a high-vacuum metal deposition device and an aluminum rear surface electrode layer with a thickness of 0.1mum is built up on an n-type amorphous silicon thin film. Then, an electrical insulation layer is formed by changing into imide and the support is eliminated by performing etching to obtain a flexible photoelectric conversion element consisting of a substrate, a transparent electrode layer, a semiconductor layer, a rear surface electrode, and an electrical insulation layer. The flexible photoelectric conversion element thus obtained is flat in terms of appearance and does not produce curl. |
