| 摘要 |
<p>PURPOSE:To enable monolithic integration to be realized by constituting electrode construction in planar form using a semi-insulation substrate and to reduce capacity and enable a high-speed operation by sandwiching a p<+>4 original layer with the substrate and MQW layer and by providing a p electrode with it as a contact layer. CONSTITUTION:A p<+>4 layer 2 is formed on a semi-insulation(SI) substrate 1, a p<-> buffer layer 3, a non-dope MQW layer 4, a n<-> buffer layer 5, and a n<+> contact layer 6 are subject to crystal growth in sequence on one part of surface of this p<+> original layer, a part which is located at a position higher than the MQW layer 4 is formed in mesa shape, and the surrounding is embedded with a semi-insulation embedding layer 7. And an n-electrode 9 is formed on an n<+> contact layer 6 through a ring-shaped hole of a SiNx film 8 so that it comes into contact with a contact layer 6. A p-electrode 9 is formed at other parts of surface of the p<+>4 original layer. A circular window 11 is formed at an n-electrode 9 to introduce inciding light and a window 13 for outgoing light reaching the p<+>4 original layer 2 is formed on the rear surface of the semi- insulation substrate 1.</p> |
