| 摘要 |
A semiconductor memory is disclosed which has a plurality of memory cells (M) arranged in a stereoscopic matrix shape. The stereoscopic memory cell structure is formed by stacking planar memory cell arrays (12a, 12b, 12c, 12d) each formed of the memory cells aligned in row and column directions. Bit lines (B) extend substantially orthogonally to intersect the layers (10), have the same row and column numbers and commonly connects the linear cell arrays formed of memory cells formed on different layers. Word lines (W) are formed on the same layer and commonly connect the linear cell arrays formed of the memory cells having the same row number. The word lines (W) from the linear cell arrays on the one same layer are combined with one parent word line (W). |
