发明名称 |
Front stage process of a fully depleted silicon-on-insulator device and a structure thereof |
摘要 |
The front-stage process of a fully depleted SOI device and the structure thereof are described An SOI substrate having an insulation layer and a crystalline silicon layer above the insulation layer is provided. An isolation layer is formed in the crystalline silicon layer and is connected to the insulation layer to define a first-type MOS active region. An epitaxial suppressing layer is formed above the crystalline silicon layer outside of the first-type MOS active region A second-type doped epitaxial silicon layer is selectively formed above the crystalline silicon layer in the first-type MOS active region. The second-type doped epitaxial layer is doped in-situ. An undoped epitaxial silicon layer is selectively formed above the second-type doped epitaxial silicon layer. The epitaxial suppressing layer is then removed.
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申请公布号 |
US2002110988(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
US20020119975 |
申请日期 |
2002.04.09 |
申请人 |
YEH WEN-KUAN;TSENG HUA-CHOU;LIU JIANN |
发明人 |
YEH WEN-KUAN;TSENG HUA-CHOU;LIU JIANN |
分类号 |
H01L21/84;H01L27/12;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/84 |
代理机构 |
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地址 |
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