| 摘要 |
<p>A semiconductor integrated circuit device includes a semiconductor substrate (1), a field insulation film (2) formed on a surface of the semiconductor substrate by a selective thermal oxidation process in which an oxidation-resistant mask is used, an insulation film (7) formed on the field insulation film, and a conductive film (81, 82, 11) covering the contact hole so as to be in contact with the surface of the substrate. The insulation film has a contact hole (7A), and edges of the contact hole extending in a first direction (X) are defined by edges of the field insulation film (2). On the other hand, edges of the contact hole extending in a second direction (Y) are defined by edges of the insulation film (7) which are formed by patterning.</p> |
