| 摘要 |
PURPOSE: A fabrication method of a gate electrode is provided to reduce resistance of a polysilicon gate by doping the polysilicon gate using a P-GILD(Projection Gas Immersion Laser Doping). CONSTITUTION: An isolation layer(102) is formed in a semiconductor substrate(100) to define an active region and an isolation region. A gate oxide(104) is formed on the entire surface of the resultant structure. A polysilicon layer(106) is deposited on the resultant structure. A doped polysilicon layer(106') is formed by implanting dopants into a desired region of the polysilicon layer(106) using a P-GILD technology and using a P-GILD masking layer(108). In the P-GILD, doping gases of PH3, PF5, AsH3, or BF3 are used and an eximer laser is used.
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