| 发明名称 |
NOVEL ARSENATE DOPANT COMPOUNDS |
| 摘要 |
<p>New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500 DEG -1400 DEG C. to release As2O5, As2O3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.</p> |
| 申请公布号 |
EP0134077(B1) |
申请公布日期 |
1989.05.10 |
| 申请号 |
EP19840303900 |
申请日期 |
1984.06.08 |
| 申请人 |
STEMCOR CORPORATION |
发明人 |
BEOGLIN, HERMAN JOHN;TRESSLER, RICHARD ERNEST |
| 分类号 |
C01G28/02;H01L21/22;H01L21/223 |
主分类号 |
C01G28/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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