METHOD FOR INCREASING MAGNETIC ANGLE OF KERR ROTATION ANGLE AND MAGNETIC KERR EFFECT MATERIAL

摘要

PURPOSE:To increase a magnetic angle of Kerr rotation to the wavelength near a plasma end by laminating one layer of metal or semiconductor film having the plasma end and one layer of magnetic material film. CONSTITUTION:The metal or semiconductor having the plasma end and >=400Angstrom thickness and the magnetic material having 50-200Angstrom thickness are laminated in respectively one layer; for example, iron Fe which is a representative magnetic material is laminated under control on a copper Cu film (having the plasma end in the neighborhood of about 560nm) of 2,400Angstrom to form the two- layered films. The effective dielectric constant within the infiltration distance inclusive of the Cu is then changed to increase the Kerr effect by the plasma resonance of the magnetic material under the effect of the interface effect when the two-layered films are formed if the layer thickness at which light infiltrates the inside of the material is considered. The angle of Kerr rotation is thereby increased without lowering the reflectivity.