发明名称 |
Semiconductor device structure including multiple fets having different spacer widths |
摘要 |
A semiconductor device structure includes at least two field effect transistors formed on same substrate, the first field effect transistor includes a spacer having a first width, the second field effect transistor includes a spacer having a second width, the first width being different than said second width. Preferably, the first width is narrower than the second width.
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申请公布号 |
US6806584(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020277907 |
申请日期 |
2002.10.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FUNG KA HING;GILBERT PERCY V. |
分类号 |
H01L29/41;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L27/088 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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