| 摘要 |
PCT No. PCT/DE86/00331 Sec. 371 Date May 5, 1987 Sec. 102(e) Date May 5, 1987 PCT Filed Aug. 22, 1986 PCT Pub. No. WO87/01868 PCT Pub. Date Mar. 26, 1987.A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base of a parasitic substrate transistor (4). In order to reduce the power loss caused by means of this parasitic substrate transistor (4), means (8) for increasing the collector path resistance (41) of the parasitic transistor (4) are provided.
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