发明名称 |
Method of producing a semiconductor laser |
摘要 |
A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.
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申请公布号 |
US4829023(A) |
申请公布日期 |
1989.05.09 |
申请号 |
US19870126501 |
申请日期 |
1987.11.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAGAI, YUTAKA;MIHASHI, YUTAKA;YAGI, TETSUYA;OTA, YOICHIRO |
分类号 |
H01S5/00;H01S5/223;H01S5/323 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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