| 摘要 |
PURPOSE:To utilize the feature of Mo without deteriorating the accuracy of a pattern by bringing the thickness of a diffusion layer, into which Mo is diffused, to the thickness or less of a doping layer and laminating an ohmic layer composed of a conductive material except Mo and Al and an Al film. CONSTITUTION:A gate electrode 11, a gate insulating film 12, an active layer 13 and a doping layer 14 are formed in succession. Mo is shaped onto the whole surface on a substrate 10, and thermally treated. Mo is diffused to the doping layer 14 at that time, and the thickness of a diffusion layer 15 formed is made smaller than that of the doping layer 14. An ohmic layer 16 composed of Cr and an Al film 17 are formed successively, and the pattern of a conductive electrode 18 is shaped. |
