发明名称 Semiconductor photoelectric conversion device, light-transparent substrate therefor and their manufacturing methods
摘要 In a semiconductor photoelectric conversion device in which a first light-transparent conductive layer for an electrode is formed on a light transparent substrate, a non-single-crystal semiconductor laminate member having formed therein at least one PIN or PN junction is formed on the first conductive layer and a second conductive layer for another electrode is formed on the semiconductor laminate member, the boundary between the substrate and the first conductive layer is formed by a first uneven surface including a number of surfaces of convexities, each having triangular, trapezoidal or like cross-section the base of which extend along the substrate surface and the two lateral edges of which are inclined thereto and make an angle phi to each other, where 45 DEG </= phi <120 DEG . The boundary between the first conductive layer and the semiconductor laminate member is formed by a second uneven surface corresponding to the first one. Further, the second conductive layer is reflective, and the boundary between the semiconductor laminate member and the second conductive layer is formed by a third uneven surface.
申请公布号 US4829013(A) 申请公布日期 1989.05.09
申请号 US19870079468 申请日期 1987.07.30
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 H01L31/04;H01L31/0236;H01L31/0392;H01L31/052;H01L31/075 主分类号 H01L31/04
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