| 摘要 |
Silicon epitaxial lateral overgrowth (ELO) techniques are employed to fabricate bipolar transistors. ELO bipolar devices have may advantages in reducing parasitic values. Because the heavily doped buried layer (or sub-collector) is eliminated in ELO structures, Ccs is greatly reduced. The concentric collector contact and its closeness to the active collector region reduce rc in the device. The parasitic collector-to-base capacitance, Ccb, is also reduced due to oxide-isolation. The ELO device is fabricated using standard silicon-processing equipment. ELO can be accomplished on <100> or <111> silicon substrates.
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