发明名称 SEMICONDUCTOR DEVICE FOR INCIDENT POSITION DETECTION
摘要 <p>PURPOSE:To prevent a reduction in a detecting sensitivity by a method wherein a plurality of branch conducting layers formed in such a way that they are extended from a main conducting layer formed on a semiconductor substrate so as to connect a pair of position signal electrodes to the effective incident region only of the incident surface of the substrate are provided. CONSTITUTION:A pair of position signal electrodes 2a and 2b are provided on both end parts on the side of the shorter side of the incident surface of a semiconductor substrate 1 and a main conducting layer 3 is formed on the central part of the incident surface between these electrodes. Moreover, branch conducting layers 4 are formed on an effective incident region B only in such a way that they are extended from the layer 3 in the direction of the incident surface and these are formed into a plurality of layers at equal intervals to one another. Accordingly, as no branch conducting layer does not exist on a reactive incident region C, a probability that electron-hole pairs flow in the layer 3 is low even though the electron-hole pairs are generated here. Moreover, a P-N junction capacitance is also reduced by the amount of the branch conducting layers which are not provided. Thereby, a reduction in a detecting sensitivity can be prevented.</p>
申请公布号 JPH01115172(A) 申请公布日期 1989.05.08
申请号 JP19870273676 申请日期 1987.10.29
申请人 HAMAMATSU PHOTONICS KK 发明人 YAMAMOTO AKINAGA;TANAKA HITOSHI;SAKAKIBARA MASAYUKI
分类号 G01B11/00;G02B7/32;H01L31/0248;H01L31/08;H01L31/16 主分类号 G01B11/00
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