| 摘要 |
<p>PURPOSE:To improve the performance and reproducibility by a method wherein, after coating step difference regions with thick film resist, electrode patterns of a transistor are formed using a thin film resist. CONSTITUTION:A PIN photodiode 2 formed on the lower step part of a substrate 1 having a step difference and a field effect transistor 3 formed on the upper step part of the substrate 1 are monolithically integrated and after coating the step difference parts with a thick film resist 7, electrodes 12-14 of the transistor 3 are formed by the photolithography using a thin film resist 18. Through these procedures, fine electrodes can be manufactured in high reproducibily so that high performance optoelectronic integrated circuits may be manufactured in high reproducibility.</p> |
