发明名称 High efficiency power amplifier
摘要 <p>A high efficiency power amplifier with a precise duty cycle is provided for use in a driver or pre-power amplifier of a Radio Frequency (RF) system. The high efficiency power amplifier with an inverter configured by one pair of Metal Oxide Semiconductor (MOS) transistors (M11,M12) includes a feedback path (R1) for adjusting an input voltage in response to an output voltage between input and output terminals of the inverter and correcting an operation time point of the MOS transistors (M11,M12) configuring the inverter. The high efficiency power amplifier can be used for a high efficiency driver to automatically correct duty cycle distortion. When the high efficiency power amplifier is placed in a front stage of various RF power amplifiers, it can be used for a pre-amplifier capable of increasing the efficiency of the RF power amplifier.</p>
申请公布号 EP1734653(A1) 申请公布日期 2006.12.20
申请号 EP20060012404 申请日期 2006.06.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE-SUP;KIM, TAE-WOOK;KANG, HYUN-IL;BAEK, DONG-HYUN
分类号 H03F3/217;H03F1/30;H03F1/32;H03F1/34 主分类号 H03F3/217
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