Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it.

摘要

The integrated structure consists of circuit components (T1-T2, R, R1-R2-R3) made by diffusion of dopes in a semiconductor substrate (1, 2, 25, 63). Each of said components is situated inside a respective insulating pocket (5) to which is applied a voltage falling between the minimum (V2) and the maximum (V1) voltage applied to the components contained in the corresponding pocket.