Pattern forming method.

摘要

The present invention provides a pattern forming method which comprises forming a material decreasing its ultraviolet transmittance upon exposure to far ultraviolet ray on a ultraviolet-sensitive positive type resist, selectively exposing it to a far ultraviolet ray, subsequently exposing its whole area to ultraviolet ray, and thereafter removing the film of said material and developing the resist. Alternatively, the material may also be a material increasing its ultraviolet transmittance upon exposure to far ultraviolet ray. In any of these cases, the film of said material functions as a contact mask upon the whole area exposure to ultraviolet ray, owing to which a pattern of good shape can be formed. As a substance decreasing its ultraviolet transmittance, the film of the material can contain an azide compound, a spiropyran compound or a melamine compound, for example. As a substance increasing its transmittance, the film of the material can contain a diazo compound or a nitron compound, for example. Further, a similarly good pattern can be obtained by using an acridine derivative as the material film and similarly combining ArF excimer laser and far ultraviolet ray, too.