| 摘要 |
<p>A trench etching process comprises the steps of: preparing a substrate, forming a mask pattern for the trench etching having a material different from that of the substrate directly on the substrate, detecting changes in results of emission spectroanalyses generated by etching the mask pattern and the substrate, and determining that the trench etching is completed when a predetermined change in the spectroanalysis results occurs. Having the mask material deposited directly on the substrate enables a uniform trench depth to be achieved.</p> |
