| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING A POLYCRYSTALLINE SILICON LAYER |
| 摘要 |
There is disclosed a memory cell in which a low resistance polycrystal silicon layer and a high resistance polycrystal silicon layer are connected to each other with a barrier metal layer provided therebetween and formed in a contact hole of an insulation film. |
| 申请公布号 |
DE3569172(D1) |
申请公布日期 |
1989.05.03 |
| 申请号 |
DE19853569172 |
申请日期 |
1985.08.21 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MASUOKA, FUJIO C/O PATENT DIVISION;OCHII, KIYOFUMI C/O PATENT DIVISION |
| 分类号 |
H01L23/532;H01L27/11;(IPC1-7):H01L27/10 |
主分类号 |
H01L23/532 |
| 代理机构 |
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