| 摘要 |
PURPOSE:To obtain the titled element having excellent bubble transfer path using a conventional commercially available injection apparatus having ordinary specifications, by using a univalent cation composed of three H atoms bonded with each other, as the ion species to be injected into a magnetic garnet film. CONSTITUTION:H3<+> is generated by using a conventional apparatus, and injected into a thin film of a garnet single crystal with an energy near the lower limit of the acceleration energy of a conventional commercially available apparatus. By this procedure, an effect similar to those attained by injecting H2<+> and H<+> ions with an energy lower than the lower limit of the acceleration energy of an apparatus can be achieved. Accordingly, ions are injected uniformly even to the part near the surface of the garnet film, and improved element performance can be achieved. |
