发明名称 Silicon-on-sapphire liquid crystal light valve and method
摘要 An LCLV is formed with a sapphire substrate base, a highly doped, thin silicon epitaxial layer forming an ohmic back contact on a smooth surface of the sapphire substrate, and a lightly doped, high resistivity silicon epitaxial layer in the range of about 20-60 microns thick on the back contact. The use of a sapphire substrate provides a better surface quality and higher resolution than previously available with the semiconductor substrates. Lattice defects in the thin back contact are reduced by the formation of a buried amorphous layer adjacent the sapphire substrate, and subsequent recrystallization thereof using the unamorphized portions of the back contact as recrystallization seeds. The application of the invention to both MOS and Schottky diode LCLVs is discussed.
申请公布号 US4826300(A) 申请公布日期 1989.05.02
申请号 US19870079607 申请日期 1987.07.30
申请人 HUGHES AIRCRAFT COMPANY 发明人 EFRON, UZI;BRAATZ, PAUL O.;VASUDEV, PRAHALAD K.;ROBERTSON, GLENN D.
分类号 G02F1/135;(IPC1-7):G02F1/13 主分类号 G02F1/135
代理机构 代理人
主权项
地址