FILM FORMING METHOD USING A HIGHLY ACTIVATED ATOM SOURCE AND FILM THEREOF

摘要

A thin film forming method and a thin film thereby are provided to improve characteristics of the thin film without the damage of the thin film and to prevent the degradation of reliability by using a heavily activated atom source. A predetermined thin film is formed on a silicon substrate, and the thin film is a silicon oxide layer or a metal film or a metal oxide layer or a metal silicate thin film. At this time, a heavily activated atom source is used for optimizing the characteristics of the predetermined thin film(S24). The heavily activated atom source treatment is performed under a predetermined gas condition. The predetermined gas contains at least one or more selected from a group consisting of N2, O2, NH3, and NO.