发明名称 |
Field emission vacuum devices |
摘要 |
A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.
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申请公布号 |
US4827177(A) |
申请公布日期 |
1989.05.02 |
申请号 |
US19870092426 |
申请日期 |
1987.09.03 |
申请人 |
THE GENERAL ELECTRIC COMPANY, P.L.C. |
发明人 |
LEE, ROSEMARY A.;CADE, NEIL A. |
分类号 |
H01J21/10;(IPC1-7):H01J19/24;H01J19/38;H01J19/46 |
主分类号 |
H01J21/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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