发明名称 Method for forming a multilayered metal network for bonding components of a high-density integrated circuit, and integrated circuit produced thereby
摘要 A method of forming a planarization layer over a multilayered metal network which interconnects the components of a high-density integrated circuit and which includes conductors having steep edges disposed over a substrate. A layer of spin-on-glass is applied over the lower metal layer so as to have a thickness substantially equal to that of the lower metal layer and to form a thin film over the conductors. The spin-on-glass layer is uniformly etched to expose the upper surfaces of the conductors, and a dielectric layer is applied onto the etched spin-on-glass layer and upper surfaces of the conductors.
申请公布号 US4826786(A) 申请公布日期 1989.05.02
申请号 US19860914356 申请日期 1986.10.02
申请人 BULL, S.A. 发明人 MERENDA, PIERRE;CHANTRAINE, PHILIPPE;LAMBERT, DANIEL
分类号 H01L21/3205;H01L21/31;H01L21/768;H01L23/532;(IPC1-7):H01L21/283;H01L21/316 主分类号 H01L21/3205
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