发明名称 Hybrid IC device
摘要 A compact and dense hybrid integrated circuit device which can be encapsulated by transfer molding can be manufactured by forming through holes in a ceramic or glass substrate, which through holes have a diameter of less than 0.2 mm, preferably less than 0.1 mm, a thin film circuit element being formed on one surface of the substrate, and a thin or thick film circuit element being formed on the other surface of the substrate. A fine through hole as mentioned above can be formed by laser drilling, etc., and plating.
申请公布号 US4827328(A) 申请公布日期 1989.05.02
申请号 US19870026972 申请日期 1987.03.17
申请人 FUJITSU LIMITED 发明人 OZAWA, TAKASHI;MUNAKATA, ICHIRO;TAKAGI, HIROAKI;KOZAKI, RYOICHI
分类号 H01L27/01;H01L21/48;H01L23/495;H01L23/538;H05K1/09;H05K1/16;H05K3/00;H05K3/42;H05K3/46;(IPC1-7):H05K1/16 主分类号 H01L27/01
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