| 摘要 |
PURPOSE:To assure good contact between Ti silicide and polycrystalline silicon by forming a metal silicide layer on part of a semiconductor substrate, forming an interlayer insulating film over the whole surface of the substrate, and ion- implanting the surface of the metal silicide through an opening made partly in the upper part of the metal silicide. CONSTITUTION:A P type Si substrate 1 includes an oxide film 2, a gate oxide film 3, polycrystalline silicon 4, a N type low concentration impurity diffusion layer 5, an oxide film side wall 6, and a N type high concentration impurity diffusion layer 7 in order formed thereon. Then, Ti is deposited on the whole surface, and annealed to form Ti silicide 8 on the gate electrode 4 and on the source-drain 7. Thereafter, non-reacted Ti is removed using a mixed solution of ammonia, hydrogen peroxide, and water. In succession, an interlayer insulating oxide film 9 is formed, and a contact hole 10 is formed using a resist pattern. Further, the surface of the metal silicide 8 is ion-implanted with As 11 through the contact hole. Moreover, polycrystalline silicon 12 is formed and etched into a desired pattern. A good contact is assured between the Ti silicide and the polycrystalline silicon. |
