| 摘要 |
PURPOSE:To improve ON-OFF characteristics and carrier mobility, to secure characteristics uniformity and safety, and to realize easy manufacture of a semiconductor by constituting a semiconductor layer with a lamination of antimony sulfide or halogenide of antimony sulfide and antimony. CONSTITUTION:A gate electrode 2 is formed on an insulating substrate 1 at a desired pattern and an insulation layer 3 and a semiconductor layer 4 are laminated and formed thereon. Main electrodes 5 and 6 are formed on the semiconductor layer 4 to form a field effect transistor which controls the current flowing between the main electrodes 5 and 6. The insulation layer 3 is made of an oxide of antimony and the semiconductor layer 4 is made of non- monocrystalline of a lamination of antimony sulfide including crystallite and polycrystal, or halogenide of antimony sulfide and antimony (for instance, antimony chloride). The insulation layer 3 and the semiconductor layer 4 are formed by the evaporation method and a thin film of good characteristics and uniformity can be produced. |
