| 摘要 |
PURPOSE: To realize the optimal occupancy of a silicon oxide layer surface by a methylsilyloxy group, and to reduce leakage currents by using a solution in which at least doubly substituted amine is present for forming the methyl substituted silyloxy group. CONSTITUTION: This device is provided with semiconductor main bodies 1 and 2, and at least a silicon oxide layer 5 provided at the position of a P-N junction 4 on the surface 3, and a methyl substituted silyloxy group is formed on a surface 6 of the silicon oxide layer 5. A solution in which at least doubly substituted amine is present is used for forming the methyl substituted silyloxy group. For example, (diethylamino)trimethyl silane or bis(diethylamino)dimethyl silane is used as the amine. In the first case, hydroxyl group reacts on the surface 6, and trimethylsilyloxy group and dimethylamine is generated on the surface 6. In the second case, two hydroxyl groups react, and one dimethylsilyldioxy group is generated on the surface 6. In both cases, the extremely satisfactory occupancy of the surface 6 of the silicon oxide layer 5 by the methylsilyloxy group can be obtained. |
