发明名称 STRUCTURE OF ELECTRODE TERMIANL OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a substrate at the lower part of an electrode terminal from being cracked by a method wherein an extraction part of a wiring conductor connecting a bump as the electrode terminal to an internal device is formed so as not to contain a bent corner. CONSTITUTION:A wiring conductor 2 connecting an electrode terminal 1 to an internal device is extracted from the electrode terminal 1 so as not to contain a bent corner. That is to say, an extraction part 3 is straight and a bent part is not formed. Accordingly, when the electrode terminal 1 is connected to an external lead wire, a stress due to heat is not caused. Even when a bent part 4 is formed, this bent part 4 does not exist at the extraction part 3 but is installed in a region which is not affected by heat during connection of the wiring conductor 2; accordingly, the stress due to heat during connection to the external lead wire is not caused at the electrode terminal 1. By this setup, it is possible to prevent a substrate at the lower part of a bump from being cracked.
申请公布号 JPH01111355(A) 申请公布日期 1989.04.28
申请号 JP19870270810 申请日期 1987.10.26
申请人 NEC CORP 发明人 YAMANOUCHI HIROSHI
分类号 H01L21/60;H01L21/3205;H01L23/52 主分类号 H01L21/60
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