| 摘要 |
PURPOSE:To easily generate arcs on a cathode surface and to improve the surface roughness of a film of an object for film formation by introducing an inert gas of the element lighter than Ar into a vacuum vessel at the time of film formation. CONSTITUTION:The cathode 2 and the object 5 for film formation are disposed in the vacuum vessel 1, the wall surface of which is a anode. Arc discharge is then generated between said anode and cathode. A bias voltage is simultaneously impressed to the object 5 for film formation to form the film of the evaporated metal of the cathode 2 on the surface of the object 5. The inert gas of the element lighter than Ar, for example, H2, He or Ne is introduced into the vacuum vessel at the time of the film formation in this method. The atoms or molecules of the inert gas are thereby absorbed on the surface of the cathode 2 and the work function of the surface of the cathode 2 is lowered. The arcs are, therefore, easily generated on the surface of the cathode 2 and the number of arc spots is increased; in addition, the current per arc spot decreases. As a result, the size of the particles evaporating from the cathode 2 surface decreases. The droplets on the surface of the object 5 are, therefore, diminished and the surface roughness is improved. |
