发明名称 APPARATUS FOR ATMOSPHERIC PRESSURE PLASMA PROCESSING
摘要 An atmospheric pressure plasma processing apparatus is provided to perform continuously an etch process, a cleaning process, and an ashing process by using plasma. An atmospheric pressure plasma processing apparatus includes a transferring unit for transferring a substrate and a plasma processing unit(120) installed on a substrate transferring path of the transferring unit. The plasma processing unit includes a plasma unit for providing plasma onto a surface of the substrate to be transferred by the transferring unit, and a heating unit for heating the substrate before providing the plasma onto the surface of the substrate. The plasma processing unit includes an upper body and a lower body. Substrate inlet/outlets are formed at both ends between the upper body and the lower body. A substrate transferring path is formed to heat the substrate and to perform a plasma process.
申请公布号 KR100785463(B1) 申请公布日期 2007.12.14
申请号 KR20060132533 申请日期 2006.12.22
申请人 LEED CO., LTD. 发明人 CHOI, CHANG SIK
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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