| 摘要 |
PURPOSE:To enhance the reaction yield by introducing reaction material into the tail-flaming part of plasma generated by the 1st stage plasma gun due to high frequency and then by introducing said material into the central part of plasma generated by on and after the 2nd plasma gun. CONSTITUTION:A high-frequency electric power source of 4MHz transmission frequency is connected to a high-frequency work coil 3, and 5.5kV plate voltage, 1.27A plate current and 29mV grid current are impressed, and argon gas is introduced from a gas-introducing pipe 9 in 2.0l/min rate to generate plasma 4. 17ml/min silane gas and 42ml/min ethylene gas searving as the reaction material gas are introduced into the tail-flaming part of plasma 4 from a material-introducing pipe 1. Said material gas is further introduced into the central part of plasma 4 generated by the same manner described above to form silicon carbide. In addition, a reaction tube 2 is cooled by feeding water from a cooling pipe 10. |
