| 摘要 |
PURPOSE:To prevent a crack from generating in a lower passivation film due to the stress at the time of lift-off and to prevent the generation of a titanium and platinum protrusion by a method wherein a spacer film is etched by isotropic etching using a resist film formed through the spacer film as a mask and after a titaniumplatinum alloy is sputtered, a lift-off is performed. CONSTITUTION:A titanium and platinum film 6 is selectively formed on a prescribed part of a wafer by a lift-off method and thereafter, a plating is applied to the film 6 and a gold metal bump 9 is formed to manufacture a TAB system semiconductor device. In that case, after a spacer film (Si nitride film) 11 consisting of Si or its nitride is formed on the above prescribed part and in its vicinity, a resist film 12 having an aperture of a prescribed form is formed, the film 11 is etched by anisotropic etching using the film 12 as a mask and after a titanium-platinum alloy is sputtered, a lift-off is performed to form the film 6. For example, after the Si nitride film 11 is selectively removed by isotropic etching using the film 12 as a mask to form overetching parts 13, the titanium-platinum alloy is sputtered. |
