| 摘要 |
A plasma processing apparatus and a method of processing a substrate using the same are provided to improve the uniformity of plasma processing by evenly supplying a process gas in a plasma processing space. A plasma processing apparatus includes a process chamber(100) in which a plasma process is performed, and an upper electrode(210) and a lower electrode(220) which are disposed opposite to each other to form a plasma processing space in the process chamber. A gas supply hole(224) is formed on one side of any one of the upper and lower electrodes, and an exhaust hole(226) is formed on the other side. The gas supply hole, and the exhaust hole are formed on an edge of the lower electrode corresponding to an external space of the substrate loaded in the plasma processing space.
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