Semiconductor Circuit using Vertical Bipolar Junction Transistor implemented by deep n-well CMOS process,申请号KR20060006477-传众专利搜索

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发明名称	Semiconductor Circuit using Vertical Bipolar Junction Transistor implemented by deep n-well CMOS process
摘要
申请公布号	KR100801056(B1)	申请公布日期	2008.02.04
申请号	KR20060006477	申请日期	2006.01.20
申请人		发明人
分类号	H03F3/45;H03F1/30	主分类号	H03F3/45
代理机构		代理人
主权项
地址

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