Monolithic semiconductor circuit with bipolar analogs - has additional epitaxially grown layer of higher impurity concentration penetrated during mfg. processes

摘要

A monolithic integrated I2L circuit has bipolar analog components. It has a zone in its surface separated from the remainder of the semiconductor substrate by a pn junction. The doping of the various zones are carried out by diffusion before application on an epitaxial layer. There is a further epitaxially grown layer (51) of higher impurity concentration on the original epitaxial layer (5). The diffusion of the base zone (3) in the analog section and the temperature treatments on one side of the insulation zone (12) will penetrate the second epitaxial layer growth simultaneously to the diffusion of the insulation zone (12).