| 摘要 |
PURPOSE:To make it possible to control the dimensions of an element under better conditions, by determining degree of proper progress of the development by means of an independent pattern with a visible size consisting of photo resist caused the exposed quantity to vary gradually. CONSTITUTION:Aside from a main pattern 2, a resist pattern 3 and a target pattern 4 constituting a photo mask, an independent pattern 5 with a visible size is arrayed under the condition caused the exposed quantity to vary gradually. The photo resist on the test mask 1 is exposed to form a latent image and is developed. Since each pattern differs in the exposed time, most of the device shapes of the developed resist patterns are bad ones in short exposure or in excess exposure, but one of them is good one with a proper exposed quantity. |
