| 摘要 |
PURPOSE:To make it possible to simplify the process of manufacturing an optical semiconductor element, and facilitate the application of this invention to the formation of an optical IC, by employing, as a crystal growth inhibition mask, a substance which has dissolubility with respect to Ca, In and the like and has a dissolution rate substantially equal to or lower than the crystal growth rate at the same temperature. CONSTITUTION:A P type InP substrate 301 is provided thereon with an Si mask 302. This process is carried out by ordinary electric resistance heating evaporation and photolithography, and the InP substrate 301 is not heated at a high temperature or left in a plasma, therefore, there is hardly any stress or damage. Within the time in which the Si mask 302 is completely dissolved, an N type InP 303 with a sufficiently large thickness is formed by means of crystal growth. The Si mask 302 is removed by a gentle melt-back treatment or dissolution while the liquid-phase equilibrium condition is maintained. Then, layers 304-306 constituting a double heterojunction and an ohmic contact layer 307 are formed by crystal growth. Si of a thickness more than 1,000Angstrom is considered to be appropriate as the mask material. |
