| 摘要 |
PURPOSE:To increase the exfoliation strength of a bump electrode, and improve the corrosion resistance of the peripheral part of an electrode pad, by forming the bump electrode in a protrusion type wherein the electrode has a skirt part extending at a contacting part with a metal film. CONSTITUTION:The whole surface of a semiconductor substrate 11 containing the upper part of an Al electrode pad 12 is coated with an insulating film 13, and an aperture is made on the upper part of the Al electrode 12. The electrode pad 12 exposed by the aperture and the whole part on the insulating film 13 are coated with a metal film 14. After a dry film is laminated and an aperture is made, baking is performed and a dry film pattern 15 which does not stick at the edge 15a is formed. After Au is selectively deposited only on the upper part of the electrode pad 12 by applying the metal film 14 to one electrode of electroplating, the dry film 15 is eliminated. Thus Au is comparatively thick deposited even at the edge part 15a of the pattern having no close contact, and an Au deposition material 16 having a skirt part 16a is obtained. By using the Au deposition material 16 as a mask, the metal film 14 except the upper part of the electrode pad 12 is eliminated to obtain a protru sion type Au bump 16. |
