<p>An improved contact type image sensor comprises a glass substrate (2), a light blocking electrode (5) formed on the glass substrate, a photosensitive semiconductor film (4) formed on the electrode, and a transparent electrode (3) formed on the semiconductor film. A light window (8) is opened through the semiconductor device and through the light blocking electrode. On the light path (7) including the light window, an uneven lenticular interface is formed in order that light transmitted through the light window for illuminating an original image carrier will give rise to reflected light incident on the photosensitive semicondcutor after reflection from the surface of the original (1).</p>
